Infineon and ROHM collaborate on silicon carbide power electronics packages to enhance flexibility for customers

Munich, Germany and Kyoto, Japan – 25 September 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and ROHM Co., Ltd. (TSE: 6963) have signed a Memorandum of Understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both Infineon and ROHM. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs.