Infineon pioneers world’s first 300 mm power gallium nitride (GaN) technology – an industry game-changer

Munich, Germany and Villach, Austria – 11 September 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced that the company has succeeded in developing the world’s first 300 mm power gallium nitride (GaN) wafer technology. Infineon is the first company in the world to master this groundbreaking technology in an existing and scalable high-volume manufacturing environment. The breakthrough will help substantially drive the market for GaN-based power semiconductors. Chip production on 300 mm wafers is technologically more advanced and significantly more efficient compared to 200 mm wafers, since the bigger wafer diameter fits 2.3 times as many chips per wafer.