Micron Advances Memory Innovation With the World's First Ultra-Dense Module for Next-Generation Servers

Micron's advanced DRAM packaging enables the 512GB DDR5 RDIMM to unlock data center performance with speeds up to 9,200 MT/s and reduced operating power by more than 60%.

BOISE, Idaho, Sept. 15, 2026 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), today announced a major milestone in memory innovation with the successful demonstration of the world's first 512GB DDR5 module on multiple server platforms. The achievement reinforces Micron's leadership in high-performance, high-capacity server memory and provides enterprise data center and cloud customers with a path to support large and demanding AI, analytics, in-memory database and simulation-heavy workloads with greater efficiency. Leading semiconductor enablers, AMD and Intel, are both actively validating the module, which will deliver speeds up to 9,200 MT/s.