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STMicroelectronics to build the world’s first fully integrated silicon carbide facility in Italy

By STMicroelectronics Newsroom

31 May 2024

New high-volume 200mm silicon carbide manufacturing facility for power devices and modules, as well as test and packaging, to be built in Catania, Italy
Projected 5 billion euros multi-year investment program including 2 billion euros support provided by the State of Italy in the framework of the EU Chips Act
Catania Silicon Carbide Campus realizes ST’s plan for fully vertically integrated SiC capabilities from R&D to manufacturing, from substrate to module, on one site, enabling automotive and industrial customers in their shift to electrification and higher energy efficiency.

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